A Wideband <i>E</i>/<i>W</i>-Band Low-Noise Amplifier MMIC in a 70-nm Gate-Length GaN HEMT Technology

Design of X Band High Power Amplifier MMIC Based on AlGaN/GaN HEMT

In this paper, we have presented an X band high power amplifier based on MMIC (Monolithic Microwave Integrated Circuit) technology for satellite remote sensing systems. We have used GaN HEMT process with 500 nm gate length technology with VD= 40 V and VG= -2 V in class E structure. The proposed two-stage power amplifier provides 25 dB power gain with maximum output power of 49.3 dBm at 10 GHz. ...

A Concurrent Dual-Band Low Noise Amplifier for GNSS Receivers

In this paper, a new design of concurrent dual-band Low Noise Amplifier (LNA) for multi-band single-channel Global Navigation Satellite System (GNSS) receivers is proposed. This new structure is able to operate concurrently at frequency of 1.2 and 1.57 GHz. Parallel and series resonance parts are employed in the input matching in order to achieve concurrent performance. With respect to used pse...

A W-band Simultaneously Matched Power and Noise Low Noise Amplifier Using CMOS 0.13µm

A complete procedure for the design of W-band low noise amplifier in MMIC technology is presented. The design is based on a simultaneously power and noise matched technique. For implementing the method, scalable bilateral transistor model parameters should be first extracted. The model is also used for transmission line utilized in the amplifier circuit. In the presented method, input/output ma...

GaN HEMT and MMIC Design and Evaluation

GaN HEMT Amplifier for C-band Space Applications

1. Introduction With the diversifying functions and increasing traffic of recent satellite communications, the amplifiers installed in satellites must provide higher power and improved efficiency. Commonly-used satellite-mounted amplifiers are, in general, either traveling wave tube amplifiers (TWTAs) or solid state power amplifiers (SSPAs) using gallium arsenide field-effect transistors (GaAs ...